| Part Number | VS-GB200TH120N |
|---|---|
| Part Status | Active |
| IGBT Type | - |
| Configuration | Half Bridge |
| Voltage - Collector Emitter Breakdown (Max) | 1200V |
| Current - Collector (Ic) (Max) | 360A |
| Power - Max | 1136W |
| Vce(on) (Max) @ Vge, Ic | 2.35V @ 15V, 200A |
| Current - Collector Cutoff (Max) | 5mA |
| Input Capacitance (Cies) @ Vce | 14.9nF @ 25V |
| Input | Standard |
| NTC Thermistor | No |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Double INT-A-PAK (3 + 4) |
| Supplier Device Package | Double INT-A-PAK |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
VS-GB05XP120KTPBF | Vishay Semiconductor Diodes Division | MODULE MTP SWITCH | Details |
|
VS-GB100DA60UP | Vishay Semiconductor Diodes Division | MODULE IGBT SOT-227 | Details |
|
VS-GB100LH120N | Vishay Semiconductor Diodes Division | IGBT 1200V 200A 833W INT-A-PAK | Details |
|
VS-GB100LP120N | Vishay Semiconductor Diodes Division | IGBT 1200V 200A 658W INT-A-PAK | Details |
|
VS-GB100NH120N | Vishay Semiconductor Diodes Division | IGBT 1200V 200A 833W INT-A-PAK | Details |
|
VS-GB100TH120N | Vishay Semiconductor Diodes Division | IGBT 1200V 200A 833W INT-A-PAK | Details |
|
VS-GB100TH120U | Vishay Semiconductor Diodes Division | IGBT 1200V 200A 1136W INT-A-PAK | Details |
|
VS-GB100TP120N | Vishay Semiconductor Diodes Division | IGBT 1200V 200A 650W INT-A-PAK | Details |
|
VS-GB100TP120U | Vishay Semiconductor Diodes Division | IGBT 1200V 150A 735W INT-A-PAK | Details |
|
VS-GB100TS60NPBF | Vishay Semiconductor Diodes Division | IGBT 600V 108A 390W INT-A-PAK | Details |
