SQS405ENW-T1_GE3 Detailed Description
Part Number |
SQS405ENW-T1_GE3 |
Part Status |
Active |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
12V |
Current - Continuous Drain (Id) @ 25°C |
16A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
2.5V, 4.5V |
Rds On (Max) @ Id, Vgs |
20 mOhm @ 13.5A, 4.5V |
Vgs(th) (Max) @ Id |
1V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
75nC @ 8V |
Vgs (Max) |
±8V |
Input Capacitance (Ciss) (Max) @ Vds |
2650pF @ 6V |
FET Feature |
- |
Power Dissipation (Max) |
39W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
PowerPAK® 1212-8 |
Package / Case |
PowerPAK® 1212-8 |
Weight |
- |
Country of Origin |
- |
RELATED PRODUCTS FOR SQS405ENW-T1_GE3