SQD19P06-60L_GE3 - Vishay Siliconix

Part Number	SQD19P06-60L_GE3
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1490pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	46W (Tc)
Rds On (Max) @ Id, Vgs	55 mOhm @ 19A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	-
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SQD19P06-60L-GE3	VIS	SQD19P06-60L-GE3 VIS TO-252 New Original Stocks	Details
SQD19P06-60L_GE3	Vishay Siliconix	MOSFET P-CH 60V 20A TO252	Details
SQD19P06-60L_T4GE3	Vishay Siliconix	MOSFET P-CH 60V 20A TO252AA	Details