| Part Number | SIHB100N60E-GE3 |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600V |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 13A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 50nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 1851pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 208W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D²PAK (TO-263) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
SIHB100N60E-GE3 | Vishay Siliconix | MOSFET E SERIES 600V D2PAK TO-2 | Details |
 |
SIHB10N40D-GE3 | Vishay Siliconix | MOSFET N-CH 400V 10A DPAK | Details |
 |
SIHB120N60E-GE3 | Vishay Siliconix | MOSFET N-CHAN 650V D2PAK TO-263 | Details |
|
SIHB12N50C-E3 | Vishay Siliconix | MOSFET N-CH 500V 12A D2PAK | Details |
|
SIHB12N50E-GE3 | Vishay Siliconix | MOSFET N-CH 500V 10.5A TO-263 | Details |
|
SIHB12N60E-GE3 | Vishay Siliconix | MOSFET N-CH 600V 12A TO263 | Details |
|
SIHB12N60ET1-GE3 | Vishay Siliconix | MOSFET N-CH 600V 12A TO263 | Details |
|
SIHB12N60ET5-GE3 | Vishay Siliconix | MOSFET N-CH 600V 12A TO263 | Details |
|
SIHB12N65E-GE3 | Vishay Siliconix | MOSFET N-CH 650V 12A D2PAK | Details |
|
SIHB15N50E-GE3 | Vishay Siliconix | MOSFET N-CH 500V 14.5A TO-263 | Details |
