SIHB12N60ET1-GE3 Detailed Description
| Part Number |
SIHB12N60ET1-GE3 |
| Part Status |
Active |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
600V |
| Current - Continuous Drain (Id) @ 25°C |
12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Rds On (Max) @ Id, Vgs |
380 mOhm @ 6A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs |
58nC @ 10V |
| Vgs (Max) |
±30V |
| Input Capacitance (Ciss) (Max) @ Vds |
937pF @ 100V |
| FET Feature |
- |
| Power Dissipation (Max) |
147W (Tc) |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Surface Mount |
| Supplier Device Package |
TO-263 (D²Pak) |
| Package / Case |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Weight |
- |
| Country of Origin |
- |
RELATED PRODUCTS FOR SIHB12N60ET1-GE3
