SIHA11N80E-GE3

SIHA11N80E-GE3 - Vishay Siliconix

Part Number
SIHA11N80E-GE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET N-CHAN 800V TO-220FP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SIHA11N80E-GE3 PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
42002 pcs
Reference Price
USD 3.92/pcs
Our Price
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SIHA11N80E-GE3 Detailed Description

Part Number SIHA11N80E-GE3
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 440 mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 88nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1670pF @ 100V
FET Feature -
Power Dissipation (Max) 34W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220 Full Pack
Package / Case TO-220-3 Full Pack
Weight -
Country of Origin -

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