SIHA15N50E-E3 - Vishay Siliconix

Part Number	SIHA15N50E-E3
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25°C	14.5A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	66nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1162pF @ 100V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	33W (Tc)
Rds On (Max) @ Id, Vgs	280 mOhm @ 7.5A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220 Full Pack
Package / Case	TO-220-3 Full Pack
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SIHA100N60E-GE3	Vishay Siliconix	MOSFET N-CH 600V TO-220 FULLPAK	Details
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SIHA120N60E-GE3	Vishay Siliconix	MOSFET N-CHAN E SERIES 600V THIN	Details
SIHA12N50E-E3	Vishay Siliconix	MOSFET N-CH 500V 10.5A TO-220FP	Details
SIHA12N60E-E3	Vishay Siliconix	MOSFET N-CH 600V 12A TO-220	Details
SIHA14N60E-E3	Vishay Siliconix	MOSFET N-CH 600V 13A TO220	Details
SIHA15N50E-E3	Vishay Siliconix	MOSFET N-CH 500V 14.5A TO-220FP	Details
SIHA15N60E-E3	Vishay Siliconix	MOSFET N-CH 600V 15A TO-220	Details
SIHA15N65E-GE3	Vishay Siliconix	MOSFET N-CHANNEL 650V 15A TO220	Details
SIHA17N80E-E3	Vishay Siliconix	MOSFET N-CH 850V TO-220 FULLPAK	Details