SIA913DJ-T1-GE3 - Vishay Siliconix

Part Number	SIA913DJ-T1-GE3
Part Status	Obsolete
FET Type	2 P-Channel (Dual)
FET Feature	Standard
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	4.5A
Rds On (Max) @ Id, Vgs	70 mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	12nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds	400pF @ 6V
Power - Max	6.5W
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6 Dual
Supplier Device Package	PowerPAK® SC-70-6 Dual
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SIA910EDJ-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 12V 4.5A SC-70-6	Details
SIA911ADJ-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 4.5A SC70-6	Details
SIA911DJ-T1-E3	Vishay Siliconix	MOSFET 2P-CH 20V 4.5A SC70-6	Details
SIA911DJ-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 4.5A SC70-6	Details
SIA911EDJ-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 4.5A SC70-6	Details
SIA912DJ-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 12V 4.5A SC70-6	Details
SIA913ADJ-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 12V 4.5A SC70-6	Details
SIA913DJ-T1-E3	VISHAY	SIA913DJ-T1-E3 VISHAY QFN New Original Stocks	Details
SIA913DJ-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 12V 4.5A SC70-6	Details
SIA914ADJ-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 4.5A SC70-6L	Details