SIA485DJ-T1-GE3

SIA485DJ-T1-GE3 - Vishay Siliconix

Part Number
SIA485DJ-T1-GE3
Manufacturer
Vishay Siliconix
Brief Description
MOSFET P-CHANNEL 150V 1.6A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
SIA485DJ-T1-GE3 PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
726260 pcs
Reference Price
USD 0.22671/pcs
Our Price
Send by email: [email protected]

Please fill the below form to request a quotation for SIA485DJ-T1-GE3

SIA485DJ-T1-GE3 Detailed Description

Part Number SIA485DJ-T1-GE3
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150V
Current - Continuous Drain (Id) @ 25°C 1.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2.6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.3nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 155pF @ 75V
FET Feature -
Power Dissipation (Max) 15.6W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PowerPAK® SC-70-6 Single
Package / Case PowerPAK® SC-70-6
Weight -
Country of Origin -

RELATED PRODUCTS FOR SIA485DJ-T1-GE3