SI1011X-T1-GE3 - Vishay Siliconix

Part Number	SI1011X-T1-GE3
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12V
Current - Continuous Drain (Id) @ 25°C	-
Drive Voltage (Max Rds On,Min Rds On)	1.2V, 4.5V
Vgs(th) (Max) @ Id	800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	62pF @ 6V
Vgs (Max)	±5V
FET Feature	-
Power Dissipation (Max)	190mW (Ta)
Rds On (Max) @ Id, Vgs	640 mOhm @ 400mA, 4.5V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SC-89-3
Package / Case	SC-89, SOT-490
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
SI1010-A-GM	Silicon Labs	IC RF TXRX+MCU ISM<1GHZ 42-WFQFN	Details
SI1010-A-GMR	Silicon Labs	IC RF TXRX+MCU ISM<1GHZ 42-WFQFN	Details
SI1010-C-GM2	Silicon Labs	IC RF TXRX+MCU ISM<1GHZ 42-VFLGA	Details
SI1010-C-GM2R	Silicon Labs	IC RF TXRX+MCU ISM<1GHZ 42-VFLGA	Details
SI1010DK	Silicon Labs	DEVELOPMENT KIT SI101X	Details
SI1011-A-GM	Silicon Labs	IC RF TXRX+MCU ISM<1GHZ 42-WFQFN	Details
SI1011-A-GMR	Silicon Labs	IC RF TXRX+MCU ISM<1GHZ 42-WFQFN	Details
SI1011-C-GM2	Silicon Labs	IC RF TXRX+MCU ISM<1GHZ 42-VFLGA	Details
SI1011-C-GM2R	Silicon Labs	IC RF TXRX+MCU ISM<1GHZ 42-VFLGA	Details
SI1011X-T1-GE3	Vishay Siliconix	MOSFET P-CH 12V SC-89	Details