TPN4R712MD,L1Q

TPN4R712MD,L1Q - Toshiba Semiconductor and Storage

Part Number
TPN4R712MD,L1Q
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
MOSFET P-CH 20V 36A 8TSON ADV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TPN4R712MD,L1Q PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
12500 pcs
Reference Price
USD 0.2896/pcs
Our Price
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TPN4R712MD,L1Q Detailed Description

Part Number TPN4R712MD,L1Q
Part Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 2.5V, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 65nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds 4300pF @ 10V
Vgs (Max) ±12V
FET Feature -
Power Dissipation (Max) 42W (Tc)
Rds On (Max) @ Id, Vgs 4.7 mOhm @ 18A, 4.5V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance (3.3x3.3)
Package / Case 8-PowerVDFN
Weight -
Country of Origin -

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