TPN2R805PL,L1Q

TPN2R805PL,L1Q - Toshiba Semiconductor and Storage

Part Number
TPN2R805PL,L1Q
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
X35 PB-F POWER MOSFET TRANSISTOR
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TPN2R805PL,L1Q PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
408357 pcs
Reference Price
USD 0.4032/pcs
Our Price
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TPN2R805PL,L1Q Detailed Description

Part Number TPN2R805PL,L1Q
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 45V
Current - Continuous Drain (Id) @ 25°C 139A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 2.8 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 2.4V @ 300µA
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3.2nF @ 22.5V
FET Feature -
Power Dissipation (Max) 2.67W (Ta), 104W (Tc)
Operating Temperature 175°C
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance (3.3x3.3)
Package / Case 8-PowerVDFN
Weight -
Country of Origin -

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