TPN22006NH,LQ

TPN22006NH,LQ - Toshiba Semiconductor and Storage

Part Number
TPN22006NH,LQ
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
MOSFET N CH 60V 9A 8-TSON
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TPN22006NH,LQ PDF online browsing
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-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
76638 pcs
Reference Price
USD 0.3509/pcs
Our Price
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TPN22006NH,LQ Detailed Description

Part Number TPN22006NH,LQ
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 9A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 6.5V, 10V
Vgs(th) (Max) @ Id 4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 710pF @ 30V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 700mW (Ta), 18W (Tc)
Rds On (Max) @ Id, Vgs 22 mOhm @ 4.5A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance (3.3x3.3)
Package / Case 8-PowerVDFN
Weight -
Country of Origin -

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