TPN1R603PL,L1Q

TPN1R603PL,L1Q - Toshiba Semiconductor and Storage

Part Number
TPN1R603PL,L1Q
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
X35 PB-F POWER MOSFET TRANSISTOR
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TPN1R603PL,L1Q PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
47436 pcs
Reference Price
USD 0.5501/pcs
Our Price
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TPN1R603PL,L1Q Detailed Description

Part Number TPN1R603PL,L1Q
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On,Min Rds On) 4.5V, 10V
Vgs(th) (Max) @ Id 10V @ 10µA
Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 3900pF @ 15V
Vgs (Max) ±20V
FET Feature -
Power Dissipation (Max) 104W (Tc)
Rds On (Max) @ Id, Vgs 1.2 mOhm @ 80A, 10V
Operating Temperature 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance (3.3x3.3)
Package / Case 8-PowerVDFN
Weight -
Country of Origin -

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