TPH3R704PL,L1Q - Toshiba Semiconductor and Storage

Part Number	TPH3R704PL,L1Q
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	92A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2.4V @ 0.2mA
Gate Charge (Qg) (Max) @ Vgs	27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2500pF @ 20V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	960mW (Ta), 81W (Tc)
Rds On (Max) @ Id, Vgs	3.7 mOhm @ 46A, 10V
Operating Temperature	175°C
Mounting Type	Surface Mount
Supplier Device Package	8-SOP Advance (5x5)
Package / Case	8-PowerVDFN
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
TPH3R003PL,LQ	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR	Details
TPH3R203NL,L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 47A 8-SOP	Details
TPH3R704PL,L1Q	Toshiba Semiconductor and Storage	MOSFET N-CH 40V 92A TSON	Details