TPCF8102(TE85L,F,M - Toshiba Semiconductor and Storage

Part Number	TPCF8102(TE85L,F,M
Part Status	Obsolete
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	6A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	1.8V, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	19nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	1550pF @ 10V
Vgs (Max)	±8V
FET Feature	-
Power Dissipation (Max)	700mW (Ta)
Rds On (Max) @ Id, Vgs	30 mOhm @ 3A, 4.5V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	VS-8 (2.9x1.5)
Package / Case	8-SMD, Flat Lead
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
TPCF8101	TOSHIBA	TPCF8101 TOSHIBA VSSOP8 New Original Stocks	Details
TPCF8101(TE85L,F,M	Toshiba Semiconductor and Storage	MOSFET P-CH 12V 6A VS-8	Details
TPCF8102(TE85L,F,M	Toshiba Semiconductor and Storage	MOSFET P-CH 20V 6A VS8 2-3U1A	Details
TPCF8104	TOSHIBA	TPCF8104 TOSHIBA SSOP8 New Original Stocks	Details
TPCF8104(TE85L,F,M	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 6A VS-8	Details
TPCF8107,LF	Toshiba Semiconductor and Storage	MOSFET P-CH 30V 6A VS-8	Details