TPCC8A01-H(TE12LQM - Toshiba Semiconductor and Storage

Part Number	TPCC8A01-H(TE12LQM
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	21A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1900pF @ 10V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	700mW (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs	9.9 mOhm @ 10.5A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-TSON
Package / Case	8-VDFN Exposed Pad
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	TPCC8A01-H	TOSHIBA	TPCC8A01-H TOSHIBA MLP-8 New Original Stocks	Details
	TPCC8A01-H(TE12LQM	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 21A SBD 8TSON	Details