TPCC8093,L1Q

TPCC8093,L1Q - Toshiba Semiconductor and Storage

Part Number
TPCC8093,L1Q
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
X35 PB-F POWER MOSFET TRANSISTOR
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TPCC8093,L1Q PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
773732 pcs
Reference Price
USD 0.2128/pcs
Our Price
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TPCC8093,L1Q Detailed Description

Part Number TPCC8093,L1Q
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 21A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 5.8 mOhm @ 10.5A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 5V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1860pF @ 10V
FET Feature -
Power Dissipation (Max) 1.9W (Ta), 30W (Tc)
Operating Temperature 150°C
Mounting Type Surface Mount
Supplier Device Package 8-TSON Advance (3.3x3.3)
Package / Case 8-PowerVDFN
Weight -
Country of Origin -

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