TPC6011(TE85L,F,M) - Toshiba Semiconductor and Storage

Part Number	TPC6011(TE85L,F,M)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	6A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4.5V, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	640pF @ 10V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	700mW (Ta)
Rds On (Max) @ Id, Vgs	20 mOhm @ 3A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	VS-6 (2.9x2.8)
Package / Case	SOT-23-6 Thin, TSOT-23-6
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
TPC6010-H(TE85L,FM	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 6.1A VS6	Details
TPC6011	TOS	TPC6011 TOS TSOP6 New Original Stocks	Details
TPC6011(TE85L,F,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 30V 6A VS6	Details
TPC6012	TOS	TPC6012 TOS SOT-26 New Original Stocks	Details
TPC6012(TE85L,F,M)	Toshiba Semiconductor and Storage	MOSFET N-CH 20V 6A VS6	Details