TK25V60X,LQ - Toshiba Semiconductor and Storage

Part Number	TK25V60X,LQ
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	25A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	135 mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id	3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs	40nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2400pF @ 300V
FET Feature	-
Power Dissipation (Max)	180W (Tc)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	4-DFN-EP (8x8)
Package / Case	4-VSFN Exposed Pad
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
TK25A60X,S5X	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 25A TO-3PN	Details
TK25A60X5,S5X	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 25A TO-220SIS	Details
TK25E06K3,S1X(S	Toshiba Semiconductor and Storage	MOSFET N-CH 60V 25A TO-220AB	Details
TK25E60X,S1X	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 25A TO-220AB	Details
TK25E60X5,S1X	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 25A TO-220AB	Details
TK25N60X,S1F	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 25A TO-247	Details
TK25N60X5,S1F	Toshiba Semiconductor and Storage	MOSFET N-CH 600V 25A TO247	Details
TK25V60X,LQ	Toshiba Semiconductor and Storage	X35 PB-F POWER MOSFET TRANSISTOR	Details