TK160F10N1L,LQ - Toshiba Semiconductor and Storage

Part Number	TK160F10N1L,LQ
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	160A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	2.4 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	122nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	10100pF @ 10V
FET Feature	-
Power Dissipation (Max)	375W (Tc)
Operating Temperature	175°C
Mounting Type	Surface Mount
Supplier Device Package	TO-220SM(W)
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight	-
Country of Origin	-

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