TK160F10N1L,LQ

TK160F10N1L,LQ - Toshiba Semiconductor and Storage

Part Number
TK160F10N1L,LQ
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
X35 PB-F POWER MOSFET TRANSISTOR
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TK160F10N1L,LQ PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
122625 pcs
Reference Price
USD 1.3427/pcs
Our Price
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TK160F10N1L,LQ Detailed Description

Part Number TK160F10N1L,LQ
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 160A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 2.4 mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 122nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 10100pF @ 10V
FET Feature -
Power Dissipation (Max) 375W (Tc)
Operating Temperature 175°C
Mounting Type Surface Mount
Supplier Device Package TO-220SM(W)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight -
Country of Origin -

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