TK13E25D,S1X(S - Toshiba Semiconductor and Storage

Part Number	TK13E25D,S1X(S
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250V
Current - Continuous Drain (Id) @ 25°C	13A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	1100pF @ 100V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	102W (Tc)
Rds On (Max) @ Id, Vgs	250 mOhm @ 6.5A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3
Weight	-
Country of Origin	-