TK10A60W,S4X - Toshiba Semiconductor and Storage

Part Number	TK10A60W,S4X
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	9.7A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	3.7V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	720pF @ 300V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	30W (Tc)
Rds On (Max) @ Id, Vgs	380 mOhm @ 4.9A, 10V
Operating Temperature	-
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3 Full Pack
Weight	-
Country of Origin	-

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