TK100L60W,VQ

TK100L60W,VQ - Toshiba Semiconductor and Storage

Part Number
TK100L60W,VQ
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
MOSFET N CH 600V 100A TO3P(L)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
TK100L60W,VQ PDF online browsing
Datasheet PDF Download
-
Category
Transistors - FETs, MOSFETs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
410 pcs
Reference Price
USD 34.32/pcs
Our Price
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TK100L60W,VQ Detailed Description

Part Number TK100L60W,VQ
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 100A (Ta)
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs(th) (Max) @ Id 3.7V @ 5mA
Gate Charge (Qg) (Max) @ Vgs 360nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds 15000pF @ 30V
Vgs (Max) ±30V
FET Feature Super Junction
Power Dissipation (Max) 797W (Tc)
Rds On (Max) @ Id, Vgs 18 mOhm @ 50A, 10V
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3P(L)
Package / Case TO-3PL
Weight -
Country of Origin -

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