| Part Number | RN1119MFV,L3F |
|---|---|
| Part Status | Active |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Frequency - Transition | - |
| Power - Max | 150mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-723 |
| Supplier Device Package | VESM |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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RN1110(T5L,F,T) | Toshiba Semiconductor and Storage | TRANS PREBIAS NPN 0.1W SSM | Details |
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RN1110,LF(CT | Toshiba Semiconductor and Storage | TRANS PREBIAS NPN 0.1W SSM | Details |
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RN1110ACT(TPL3) | Toshiba Semiconductor and Storage | TRANS PREBIAS NPN 0.1W CST3 | Details |
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RN1110CT(TPL3) | Toshiba Semiconductor and Storage | TRANS PREBIAS NPN 0.05W CST3 | Details |
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RN1110MFV | ORIGINAL | RN1110MFV ORIGINAL NEW New Original Stocks | Details |
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RN1110MFV,L3F | Toshiba Semiconductor and Storage | TRANS PREBIAS NPN 0.15W VESM | Details |
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RN1111 | TOSHIBA | RN1111 TOSHIBA SOT323 New Original Stocks | Details |
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RN1111,LF(CT | Toshiba Semiconductor and Storage | TRANS PREBIAS NPN 0.1W SSM | Details |
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RN1111ACT(TPL3) | Toshiba Semiconductor and Storage | TRANS PREBIAS NPN 0.1W CST3 | Details |
|
RN1111CT(TPL3) | Toshiba Semiconductor and Storage | TRANS PREBIAS NPN 0.05W CST3 | Details |
