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Home › Product Categories › Discrete Semiconductor › Transistors - IGBTs - Single › GT10J312(Q)
GT10J312(Q)

GT10J312(Q) - Toshiba Semiconductor and Storage

Part Number
GT10J312(Q)
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
IGBT 600V 10A 60W TO220SM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
GT10J312(Q) PDF online browsing
Datasheet PDF Download
GT10J312(Q).pdf
Category
Transistors - IGBTs - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
4189 pcs
Reference Price
USD 0/pcs
Our Price
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GT10J312(Q) Detailed Description

Part Number GT10J312(Q)
Part Status Obsolete
IGBT Type -
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 10A
Current - Collector Pulsed (Icm) 20A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Power - Max 60W
Switching Energy -
Input Type Standard
Gate Charge -
Td (on/off) @ 25°C 400ns/400ns
Test Condition 300V, 10A, 100 Ohm, 15V
Reverse Recovery Time (trr) 200ns
Operating Temperature 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package TO-220SM
Weight -
Country of Origin -

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