GT10G131(TE12L,Q) - Toshiba Semiconductor and Storage

Part Number	GT10G131(TE12L,Q)
Part Status	Obsolete
IGBT Type	-
Voltage - Collector Emitter Breakdown (Max)	400V
Current - Collector (Ic) (Max)	-
Current - Collector Pulsed (Icm)	200A
Vce(on) (Max) @ Vge, Ic	2.3V @ 4V, 200A
Power - Max	1W
Switching Energy	-
Input Type	Standard
Gate Charge	-
Td (on/off) @ 25°C	3.1µs/2µs
Test Condition	-
Reverse Recovery Time (trr)	-
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.173", 4.40mm Width)
Supplier Device Package	8-SOP (5.5x6.0)
Weight	-
Country of Origin	-