CUS08F30,H3F - Toshiba Semiconductor and Storage

Part Number	CUS08F30,H3F
Part Status	Active
Diode Type	Schottky
Voltage - DC Reverse (Vr) (Max)	30V
Current - Average Rectified (Io)	800mA
Voltage - Forward (Vf) (Max) @ If	220mV @ 10mA
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	-
Current - Reverse Leakage @ Vr	50µA @ 30V
Capacitance @ Vr, F	170pF @ 0V, 1MHz
Mounting Type	Surface Mount
Package / Case	SC-76, SOD-323
Supplier Device Package	USC
Operating Temperature - Junction	125°C (Max)
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
CUS01	TOSHIBA	CUS01 TOSHIBA SOD123 New Original Stocks	Details
CUS01(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A USFLAT	Details
CUS02	TOSHIBA	CUS02 TOSHIBA SOD323 New Original Stocks	Details
CUS02(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 1A USFLAT	Details
CUS03(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 700MA US-FLAT	Details
CUS04(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 60V 700MA US-FLAT	Details
CUS05(TE85L,Q,M)	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 20V 1A US-FLAT	Details
CUS05F30,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 500MA USC	Details
CUS05F40,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 40V 500MA USC	Details
CUS05S30,H3F	Toshiba Semiconductor and Storage	DIODE SCHOTTKY 30V 500MA USC	Details