BAS316,H3F - Toshiba Semiconductor and Storage

Part Number	BAS316,H3F
Part Status	Active
Diode Type	Standard
Voltage - DC Reverse (Vr) (Max)	100V
Current - Average Rectified (Io)	250mA
Voltage - Forward (Vf) (Max) @ If	1.25V @ 150mA
Speed	Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)	3ns
Current - Reverse Leakage @ Vr	200nA @ 80V
Capacitance @ Vr, F	0.35pF @ 0V, 1MHz
Mounting Type	Surface Mount
Package / Case	SC-76, SOD-323
Supplier Device Package	USC
Operating Temperature - Junction	150°C (Max)
Weight	-
Country of Origin	-

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