2SA1930,LBS2DIAQ(J

2SA1930,LBS2DIAQ(J - Toshiba Semiconductor and Storage

Part Number
2SA1930,LBS2DIAQ(J
Manufacturer
Toshiba Semiconductor and Storage
Brief Description
TRANS PNP 2A 180V TO220-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
2SA1930,LBS2DIAQ(J PDF online browsing
Datasheet PDF Download
2SA1930,LBS2DIAQ(J.pdf
Category
Transistors - Bipolar (BJT) - Single
Delivery Time
1 Day
Date Code
New
Stock Quantity
4028 pcs
Reference Price
USD 0/pcs
Our Price
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2SA1930,LBS2DIAQ(J Detailed Description

Part Number 2SA1930,LBS2DIAQ(J
Part Status Last Time Buy
Transistor Type PNP
Current - Collector (Ic) (Max) 2A
Voltage - Collector Emitter Breakdown (Max) 180V
Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 1A
Current - Collector Cutoff (Max) 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 5V
Power - Max 2W
Frequency - Transition 200MHz
Operating Temperature 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Supplier Device Package TO-220NIS
Weight -
Country of Origin -

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