TSM2N100CH C5G - Taiwan Semiconductor Corporation

Part Number	TSM2N100CH C5G
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000V
Current - Continuous Drain (Id) @ 25°C	1.85A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	8.5 Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id	5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	17nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	625pF @ 25V
FET Feature	-
Power Dissipation (Max)	77W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-251 (IPAK)
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
TSM2N100CH C5G	Taiwan Semiconductor Corporation	MOSFET N-CH 1000V 1.85A TO251	Details
TSM2N100CP ROG	Taiwan Semiconductor Corporation	MOSFET N-CH 1000V 1.85A TO252	Details
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TSM2N60CPRO	TW	TSM2N60CPRO TW SOT-25.. New Original Stocks	Details
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TSM2N60ECH C5G	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 600V 2A TO251	Details
TSM2N60ECP ROG	Taiwan Semiconductor Corporation	MOSFET N-CHANNEL 600V 2A TO252	Details
TSM2N60S	TSC	600V N-Channel Power MOSFET	Details