RSJ250P10TL - Rohm Semiconductor

Part Number	RSJ250P10TL
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	25A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	4V, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	60nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	8000pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	50W (Tc)
Rds On (Max) @ Id, Vgs	63 mOhm @ 25A, 10V
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	LPTS
Package / Case	SC-83
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	RSJ250P10FRATL	Rohm Semiconductor	4V DRIVE PCH MOSFET AEC-Q101 QU	Details
	RSJ250P10TL	Rohm Semiconductor	MOSFET P-CH 100V 25A LPTS	Details