NVD5802NT4G Detailed Description
Part Number |
NVD5802NT4G |
Part Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
40V |
Current - Continuous Drain (Id) @ 25°C |
16.4A (Ta), 101A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
5V, 10V |
Rds On (Max) @ Id, Vgs |
4.4 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id |
3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
100nC @ 10V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
5300pF @ 12V |
FET Feature |
- |
Power Dissipation (Max) |
2.5W (Ta), 93.75W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
DPAK |
Package / Case |
TO-252-3, DPak (2 Leads + Tab), SC-63 |
Weight |
- |
Country of Origin |
- |
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