NSS40300DDR2G - ON Semiconductor

Part Number	NSS40300DDR2G
Part Status	Active
Transistor Type	2 PNP (Dual)
Current - Collector (Ic) (Max)	3A
Voltage - Collector Emitter Breakdown (Max)	40V
Vce Saturation (Max) @ Ib, Ic	170mV @ 200mA, 2A
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	180 @ 1A, 2V
Power - Max	653mW
Frequency - Transition	100MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOIC
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
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NSS40201LT1G	ON Semiconductor	TRANS NPN 40V 2A SOT-23	Details
NSS40300DDR2G	ON Semiconductor	TRANS 2PNP 40V 3A 8SOIC	Details
NSS40300MDR2G	ON Semiconductor	TRANS 2PNP 40V 3A 8SOIC	Details
NSS40300MZ4T1G	ON Semiconductor	TRANS PNP 40V 3A SOT-223	Details
NSS40300MZ4T3G	ON Semiconductor	TRANS PNP 40V 3A SOT-223	Details
NSS40301MDR2G	ON Semiconductor	TRANS 2NPN 40V 3A 8SOIC	Details
NSS40301MZ4T1G	ON Semiconductor	TRANS NPN 40V 3A SOT223	Details
NSS40301MZ4T3G	ON Semiconductor	TRANS NPN 40V 3A SOT-223	Details