NSS40200UW6T1G - ON Semiconductor

Part Number	NSS40200UW6T1G
Part Status	Active
Transistor Type	PNP
Current - Collector (Ic) (Max)	2A
Voltage - Collector Emitter Breakdown (Max)	40V
Vce Saturation (Max) @ Ib, Ic	300mV @ 20mA, 2A
Current - Collector Cutoff (Max)	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	150 @ 1A, 2V
Power - Max	875mW
Frequency - Transition	140MHz
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	6-WDFN Exposed Pad
Supplier Device Package	6-WDFN (2x2)
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
NSS40200LT1G	ON Semiconductor	TRANS PNP 40V 2A SOT-23	Details
NSS40200UW6T1G	ON Semiconductor	TRANS PNP 40V 2A 6-WDFN	Details
NSS40201LT1G	ON Semiconductor	TRANS NPN 40V 2A SOT-23	Details
NSS40300DDR2G	ON Semiconductor	TRANS 2PNP 40V 3A 8SOIC	Details
NSS40300MDR2G	ON Semiconductor	TRANS 2PNP 40V 3A 8SOIC	Details
NSS40300MZ4T1G	ON Semiconductor	TRANS PNP 40V 3A SOT-223	Details
NSS40300MZ4T3G	ON Semiconductor	TRANS PNP 40V 3A SOT-223	Details
NSS40301MDR2G	ON Semiconductor	TRANS 2NPN 40V 3A 8SOIC	Details
NSS40301MZ4T1G	ON Semiconductor	TRANS NPN 40V 3A SOT223	Details
NSS40301MZ4T3G	ON Semiconductor	TRANS NPN 40V 3A SOT-223	Details