NSM21356DW6T1G

NSM21356DW6T1G - ON Semiconductor

Part Number
NSM21356DW6T1G
Manufacturer
ON Semiconductor
Brief Description
TRANS NPN PREBIAS/PNP SOT363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Datasheet online view
NSM21356DW6T1G PDF online browsing
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-
Category
Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Delivery Time
1 Day
Date Code
New
Stock Quantity
4257 pcs
Reference Price
USD 0/pcs
Our Price
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NSM21356DW6T1G Detailed Description

Part Number NSM21356DW6T1G
Part Status Obsolete
Transistor Type 1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max) 100mA
Voltage - Collector Emitter Breakdown (Max) 50V, 65V
Resistor - Base (R1) (Ohms) 47k
Resistor - Emitter Base (R2) (Ohms) 47k
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 5mA, 10V / 220 @ 2mA, 5V
Vce Saturation (Max) @ Ib, Ic 250mV @ 300µA, 10mA / 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max) 500nA
Frequency - Transition -
Power - Max 230mW
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Supplier Device Package SC-88/SC70-6/SOT-363
Weight -
Country of Origin -

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