NCD5702DR2G - ON Semiconductor

Part Number	NCD5702DR2G
Part Status	Active
Driven Configuration	Half-Bridge
Channel Type	Independent
Number of Drivers	1
Gate Type	IGBT
Voltage - Supply	5.5V
Logic Voltage - VIL, VIH	0.75V, 4.3V
Current - Peak Output (Source, Sink)	7.8A, 6.8A
Input Type	Inverting
High Side Voltage - Max (Bootstrap)	-
Rise / Fall Time (Typ)	9.2ns, 7.9ns
Operating Temperature	-40°C ~ 125°C (TA)
Mounting Type	Surface Mount
Package / Case	16-SOIC (0.154", 3.90mm Width)
Supplier Device Package	16-SOIC
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
NCD57000DWR2G	ON Semiconductor	GALVANIC ISOLATED HIGH CU	Details
NCD57001DWR2G	ON Semiconductor	GALVANIC ISOLATED HIGH CU	Details
NCD5700DR2G	ON Semiconductor	HIGH CURRENT IGBT GATE DRIVER	Details
NCD5701ADR2G	ON Semiconductor	HIGH CURRENT IGBT GATE DRIVER	Details
NCD5701BDR2G	ON Semiconductor	HIGH CURRENT IGBT GATE DRIVER	Details
NCD5701CDR2G	ON Semiconductor	HIGH CURRENT IGBT GATE DRIVER	Details
NCD5702DR2G	ON Semiconductor	METAL SPIN OF NCD5702. HI	Details
NCD5703ADR2G	ON Semiconductor	METAL SPIN OF NCD5703A. H	Details
NCD5703BDR2G	ON Semiconductor	METAL SPIN OF NCD5703B. H	Details
NCD5703CDR2G	ON Semiconductor	METAL SPIN OF NCD5703C. H	Details