PMV40UN,215 - NXP USA Inc.

Part Number	PMV40UN,215
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	4.9A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	1.8V, 4.5V
Vgs(th) (Max) @ Id	700mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs	9.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	445pF @ 30V
Vgs (Max)	±8V
FET Feature	-
Power Dissipation (Max)	1.9W (Tc)
Rds On (Max) @ Id, Vgs	47 mOhm @ 2A, 4.5V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-236AB (SOT23)
Package / Case	TO-236-3, SC-59, SOT-23-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
PMV40UN	NXP	PMV40UN NXP SOT-23 New Original Stocks	Details
PMV40UN,215	NXP USA Inc.	MOSFET N-CH 30V 4.9A SOT-23	Details
PMV40UN2R	Nexperia USA Inc.	MOSFET N-CH 30V 3.7A SOT23	Details
PMV42ENER	Nexperia USA Inc.	MOSFET N-CH 30V TO-236AB	Details
PMV450ENEAR	Nexperia USA Inc.	MOSFET N-CH 60V TO-236AB	Details
PMV45EN	NXP	PMV45EN NXP SOT-23 New Original Stocks	Details
PMV45EN,215	NXP USA Inc.	MOSFET N-CH 30V 5.4A SOT-23	Details
PMV45EN2R	Nexperia USA Inc.	MOSFET N-CH 30V SOT23	Details
PMV45EN2VL	Nexperia USA Inc.	MOSFET N-CH 30V 5.1A TO236AB	Details
PMV48XP	ORIGINAL	PMV48XP ORIGINAL SOT23 New Original Stocks	Details