PSMN8R5-100PSFQ - Nexperia USA Inc.

Part Number	PSMN8R5-100PSFQ
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	98A (Ta)
Drive Voltage (Max Rds On,Min Rds On)	7V, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	44.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	3181pF @ 50V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	183W (Ta)
Rds On (Max) @ Id, Vgs	8.7 mOhm @ 25A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3
Weight	-
Country of Origin	-

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