PMZB950UPELYL - Nexperia USA Inc.

Part Number	PMZB950UPELYL
Part Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	1.2V, 4.5V
Rds On (Max) @ Id, Vgs	1.4 Ohm @ 500mA, 4.5V
Vgs(th) (Max) @ Id	950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	2.1nC @ 4.5V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	43pF @ 10V
FET Feature	-
Power Dissipation (Max)	360mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DFN1006B-3
Package / Case	3-XFDFN
Weight	-
Country of Origin	-

Image	Part Number	Manufacturers	Description	View
	PMZB950UPELYL	Nexperia USA Inc.	MOSFET P-CH 20V 500MA 3DFN1006B	Details
	PMZB950UPEYL	Nexperia USA Inc.	MOSFET P-CH 20V 3QFN	Details