| Part Number | APT11N80BC3G |
|---|---|
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 3.9V @ 680µA |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1585pF @ 25V |
| Vgs (Max) | ±20V |
| FET Feature | - |
| Power Dissipation (Max) | 156W (Tc) |
| Rds On (Max) @ Id, Vgs | 450 mOhm @ 7.1A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 [B] |
| Package / Case | TO-247-3 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
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APT1001R1BN | Microsemi Corporation | MOSFET N-CH 1KV 10.5A TO247AD | Details |
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APT1001RBN | Microsemi Corporation | MOSFET N-CH 1KV 11A TO247AD | Details |
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APT10021JFLL | Microsemi Corporation | MOSFET N-CH 1000V 37A SOT-227 | Details |
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APT10021JLL | Microsemi Corporation | MOSFET N-CH 1000V 37A SOT-227 | Details |
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APT1002RBN | APT | APT1002RBN APT TO-247 New Original Stocks | Details |
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APT1002RBNG | Microsemi Corporation | MOSFET N-CH 1KV 8A TO247AD | Details |
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APT10035B2FLLG | Microsemi Corporation | MOSFET N-CH 1000V 28A T-MAX | Details |
|
APT10035B2LLG | Microsemi Corporation | MOSFET N-CH 1000V 28A T-MAX | Details |
|
APT10035JLL | Microsemi Corporation | MOSFET N-CH 1000V 25A SOT-227 | Details |
 |
APT10035LLLG | Microsemi Corporation | MOSFET N-CH 1000V 28A TO-264 | Details |
