APT1001RBN - Microsemi Corporation

Part Number	APT1001RBN
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000V
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	130nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2950pF @ 25V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	310W (Tc)
Rds On (Max) @ Id, Vgs	1 Ohm @ 5.5A, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AD
Package / Case	TO-247-3
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
APT1001R1BN	Microsemi Corporation	MOSFET N-CH 1KV 10.5A TO247AD	Details
APT1001RBN	Microsemi Corporation	MOSFET N-CH 1KV 11A TO247AD	Details
APT10021JFLL	Microsemi Corporation	MOSFET N-CH 1000V 37A SOT-227	Details
APT10021JLL	Microsemi Corporation	MOSFET N-CH 1000V 37A SOT-227	Details
APT1002RBN	APT	APT1002RBN APT TO-247 New Original Stocks	Details
APT1002RBNG	Microsemi Corporation	MOSFET N-CH 1KV 8A TO247AD	Details
APT10035B2FLLG	Microsemi Corporation	MOSFET N-CH 1000V 28A T-MAX	Details
APT10035B2LLG	Microsemi Corporation	MOSFET N-CH 1000V 28A T-MAX	Details
APT10035JLL	Microsemi Corporation	MOSFET N-CH 1000V 25A SOT-227	Details
APT10035LLLG	Microsemi Corporation	MOSFET N-CH 1000V 28A TO-264	Details