| Part Number | APT1001RBN |
|---|---|
| Part Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 1000V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 130nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 2950pF @ 25V |
| Vgs (Max) | ±30V |
| FET Feature | - |
| Power Dissipation (Max) | 310W (Tc) |
| Rds On (Max) @ Id, Vgs | 1 Ohm @ 5.5A, 10V |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247AD |
| Package / Case | TO-247-3 |
| Weight | - |
| Country of Origin | - |
| Image | Part Number | Manufacturers | Description | View |
|---|---|---|---|---|
|
APT1001R1BN | Microsemi Corporation | MOSFET N-CH 1KV 10.5A TO247AD | Details |
|
APT1001RBN | Microsemi Corporation | MOSFET N-CH 1KV 11A TO247AD | Details |
 |
APT10021JFLL | Microsemi Corporation | MOSFET N-CH 1000V 37A SOT-227 | Details |
|
APT10021JLL | Microsemi Corporation | MOSFET N-CH 1000V 37A SOT-227 | Details |
 |
APT1002RBN | APT | APT1002RBN APT TO-247 New Original Stocks | Details |
|
APT1002RBNG | Microsemi Corporation | MOSFET N-CH 1KV 8A TO247AD | Details |
 |
APT10035B2FLLG | Microsemi Corporation | MOSFET N-CH 1000V 28A T-MAX | Details |
|
APT10035B2LLG | Microsemi Corporation | MOSFET N-CH 1000V 28A T-MAX | Details |
|
APT10035JLL | Microsemi Corporation | MOSFET N-CH 1000V 25A SOT-227 | Details |
 |
APT10035LLLG | Microsemi Corporation | MOSFET N-CH 1000V 28A TO-264 | Details |
