IXTY1R4N120PHV - IXYS

Part Number	IXTY1R4N120PHV
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1200V
Current - Continuous Drain (Id) @ 25°C	1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	13 Ohm @ 700mA, 10V
Vgs(th) (Max) @ Id	4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	24.8nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	666pF @ 25V
FET Feature	-
Power Dissipation (Max)	86W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
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IXTY18P10T	IXYS	MOSFET P-CH 100V 18A TO-252	Details
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IXTY1N80P	IXYS	MOSFET N-CH 800V 1A TO-252	Details