IXTY12N06TTRL - IXYS

Part Number	IXTY12N06TTRL
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 25µA
Gate Charge (Qg) (Max) @ Vgs	3.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	256pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	33W (Tc)
Rds On (Max) @ Id, Vgs	85 mOhm @ 6A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IXTY10P15T	IXYS	MOSFET P-CH 150V 10A TO-252	Details
IXTY12N06T	IXYS	MOSFET N-CH 60V 12A TO-252	Details
IXTY12N06TTRL	IXYS	MOSFET N-CH 60V 12A TO-252	Details
IXTY15N20T	IXYS	MOSFET N-CH 200V 15A TO-252	Details
IXTY15P15T	IXYS	MOSFET P-CH 150V 15A TO-252	Details
IXTY18P10T	IXYS	MOSFET P-CH 100V 18A TO-252	Details
IXTY1N100P	IXYS	MOSFET N-CH 1000V 1A TO-252	Details
IXTY1N120P	IXYS	MOSFET N-CH 1200V 1A TO-252	Details
IXTY1N80	IXYS	MOSFET N-CH 800V 750MA TO-252AA	Details
IXTY1N80P	IXYS	MOSFET N-CH 800V 1A TO-252	Details