IXTY02N120P - IXYS

Part Number	IXTY02N120P
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1200V
Current - Continuous Drain (Id) @ 25°C	200mA (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 100µA
Gate Charge (Qg) (Max) @ Vgs	4.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	104pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	33W (Tc)
Rds On (Max) @ Id, Vgs	75 Ohm @ 500mA, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252, (D-Pak)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
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