IXTY01N100D - IXYS

Part Number	IXTY01N100D
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000V
Current - Continuous Drain (Id) @ 25°C	100mA (Tc)
Drive Voltage (Max Rds On,Min Rds On)	-
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Input Capacitance (Ciss) (Max) @ Vds	120pF @ 25V
Vgs (Max)	±20V
FET Feature	Depletion Mode
Power Dissipation (Max)	1.1W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs	110 Ohm @ 50mA, 0V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252, (D-Pak)
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IXTY01N100	IXYS	MOSFET N-CH 1000V 0.1A DPAK	Details
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IXTY08N100D2	IXYS	MOSFET N-CH 1000V 800MA DPAK	Details
IXTY08N100P	IXYS	MOSFET N-CH 1000V 800MA TO-252	Details
IXTY08N120P	IXYS	MOSFET N-CH 1200V 8A TO-220	Details