IXTH200N10T - IXYS

Part Number	IXTH200N10T
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	200A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	152nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	9400pF @ 25V
Vgs (Max)	±30V
FET Feature	-
Power Dissipation (Max)	550W (Tc)
Rds On (Max) @ Id, Vgs	5.5 mOhm @ 50A, 10V
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247 (IXTH)
Package / Case	TO-247-3
Weight	-
Country of Origin	-

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