IXTH04N300P3HV - IXYS

Part Number	IXTH04N300P3HV
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	3000V
Current - Continuous Drain (Id) @ 25°C	400mA (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	13nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	283pF @ 25V
Vgs (Max)	±20V
FET Feature	-
Power Dissipation (Max)	104W (Tc)
Rds On (Max) @ Id, Vgs	190 Ohm @ 200mA, 10V
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247HV
Package / Case	TO-247-3 Variant
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IXTH02N250	IXYS	MOSFET N-CH 2500V 0.2A TO247	Details
IXTH02N450HV	IXYS	MOSFET N-CH 4500V 0.2A TO247HV	Details
IXTH04N300P3HV	IXYS	2000V TO 3000V POLAR3 POWER MOSF	Details
IXTH06N220P3HV	IXYS	MOSFET N-CH	Details