IXTA3N100D2HV - IXYS

Part Number	IXTA3N100D2HV
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	1000V
Current - Continuous Drain (Id) @ 25°C	3A (Tj)
Drive Voltage (Max Rds On, Min Rds On)	0V
Rds On (Max) @ Id, Vgs	6 Ohm @ 1.5A, 0V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	37.5nC @ 5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1020pF @ 25V
FET Feature	Depletion Mode
Power Dissipation (Max)	125W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263HV
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IXTA300N04T2	IXYS	MOSFET N-CH 40V 300A TO-263	Details
IXTA300N04T2-7	IXYS	MOSFET N-CH 40V 300A TO-263	Details
IXTA32N20T	IXYS	MOSFET N-CH 200V 32A TO-263	Details
IXTA32P05T	IXYS	MOSFET P-CH 50V 32A TO-263	Details
IXTA32P20T	IXYS	MOSFET P-CH 200V 32A TO-263	Details
IXTA340N04T4	IXYS	MOSFET N-CH 40V 340A	Details
IXTA340N04T4-7	IXYS	MOSFET N-CH 40V 340A	Details
IXTA34N65X2	IXYS	MOSFET N-CH	Details
IXTA36N20T	IXYS	MOSFET N-CH 200V 36A TO-263	Details
IXTA36N30P	IXYS	MOSFET N-CH 300V 36A TO-263	Details