IXKR25N80C - IXYS

Part Number	IXKR25N80C
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs(th) (Max) @ Id	4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs	355nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	-
Vgs (Max)	±20V
FET Feature	Super Junction
Power Dissipation (Max)	-
Rds On (Max) @ Id, Vgs	150 mOhm @ 18A, 10V
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	ISOPLUS247™
Package / Case	ISOPLUS247™
Weight	-
Country of Origin	-

Part Number	Manufacturers	Description	View
IXKR25N80C	IXYS	MOSFET N-CH 800V 25A ISOPLUS247	Details
IXKR40N60C	IXYS	MOSFET N-CH 600V 38A ISOPLUS247	Details
IXKR47N60C5	IXYS	MOSFET N-CH 600V 47A ISOPLUS247	Details